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PDTC123JT Information
NXP PDTC123JT technical specifications, attributes, parameters and parts with similar specifications to NXP PDTC123JT.
- Type
- Parameter
- Number of Pins
- 3
- RoHS Status
- RoHS Compliant
- Packaging
- Cut Tape
- Resistance
- 2.805 MΩ
- Max Operating Temperature
- 150 °C
- Min Operating Temperature
- -65 °C
- Gender
- Female
- Max Power Dissipation
- 250 mW
- Number of Contacts
- 37
- Number of Elements
- 1
- Type
- Parameter
- Polarity
- NPN
- Contact Style
- Socket
- Insulation Resistance
- 5 GΩ
- Power Dissipation
- 250 mW
- Gain Bandwidth Product
- 230 MHz
- Collector Emitter Voltage (VCEO)
- 50 V
- Max Collector Current
- 100 mA
- Collector Emitter Breakdown Voltage
- 50 V
- Transition Frequency
- 230 MHz
- Collector Emitter Saturation Voltage
- 100 mV
Download datasheets and manufacturer documentation for NXP PDTC123JT.
Product Description:
The PDTC123JT is a high-performance N-channel MOSFET transistor from NXP, designed for use in a wide range of applications. This discrete semiconductor product is a single MOSFET with a resistance of 2.805 MΩ, making it an ideal choice for circuits where high resistance is required.
Features:
- Female gender for easy integration into circuits
- High insulation resistance of 5 GΩ for reliable operation
- Compliant with RoHS regulations for environmental sustainability
- Socket contact style with 37 contacts for secure connections
- Compact package with a height of 1.1 mm for space-constrained applications
- High gain bandwidth product of 230 MHz for fast switching
- High collector-emitter breakdown voltage of 50 V for reliable operation
- Low collector-emitter saturation voltage of 100 mV for efficient power consumption
- High transition frequency of 230 MHz for high-frequency applications
Applications:
- Primary applications include use in power supplies, motor control, and audio amplifiers
- Secondary applications include use in industrial control systems, automotive electronics, and medical devices
Alternative Parts:
- Other N-channel MOSFET transistors from NXP, such as the PDTC123JT, PDTC123JU, and PDTC123JV
- Similar products from other manufacturers, such as the IRF510, IRF520, and STP16NF06
Embedded Modules:
- This component is used in various embedded modules, including:
- Power supplies for industrial control systems
- Motor control modules for automotive applications
- Audio amplifiers for consumer electronics
Frequently Asked Questions (FAQs):
Q: What is the maximum power dissipation of the PDTC123JT? A: The maximum power dissipation is 250 mW.
Q: What is the maximum operating temperature of the PDTC123JT? A: The maximum operating temperature is 150 °C.
Q: Is the PDTC123JT RoHS compliant? A: Yes, the PDTC123JT is RoHS compliant.
Q: What is the transition frequency of the PDTC123JT? A: The transition frequency is 230 MHz.
Q: What is the maximum collector current of the PDTC123JT? A: The maximum collector current is 100 mA.
Q: What is the packaging type of the PDTC123JT? A: The packaging type is cut tape.
PDTC123JT Relevant information
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