Microchip PD70224ILQ-TR

Manufacturer No:

PD70224ILQ-TR

Manufacturer:

Microchip

Package:

40-VFQFN Exposed Pad, 32 Leads

Description:

IC BRIDGE RECT FET BASED 40MLPQ.OR Controller Bridge Rectifier N-Channel Bridge (2) 40-QFN (6x8)

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PD70224ILQ-TR information

Microchip PD70224ILQ-TR technical specifications, attributes, parameters and parts with similar specifications to Microchip PD70224ILQ-TR.

Type
Parameter

Product Type
PoE IdealBridge

Standards Supported
IEEE 802.3af, IEEE 802.3at, IEEE 802.3bt, PoH

IC Type
Ideal diode bridge

POE Type
AT/BT Type 4 / PoH

PoE Class
1-8

Output Power
95W

Maximum Current
2A

Maximum Channel Resistance
0.76 Ohm

Operating Temperature (C)
–40 to 85

Temperature Grade
Industrial

Integrated PWM Controller
NA

Download datasheets and manufacturer documentation for Microchip PD70224ILQ-TR.

Data Sheets:

5f55f6d21e9e1b5558d703fc71861ad0.pdf

Application Notes:

36e01ff83ebb4ae6914c33c417ec16aa.pdf

a2e8f91f4d3def0722029397eeb5fab2.pdf

PD70224 is a dual pack of MOSFET-based full-bridge rectifiers. It contains low-Rds 0.16Ω N-channel MOSFETs for much higher overall efficiency and higher output power, particularly when used in Powered Devices (PDs) for PoE applications. The entire drive circuitry for driving the MOSFETs is on-chip, including a charge pump for driving the high-side N-channel MOSFETs. The total forward drop (bridge offset) introduced by the IdealBridge™ rectifier is only 192 mV at 0.6A, compared to a standard bridge rectifier that typically presents 2000 mV of forward drop. PD70224 IdealBridge™ can support over 1A current, making it the ideal choice not only for modern energy-saving 2-pair applications compliant with IEEE 802.3af and IEEE 802.3at (Type 1 and Type 2), but also 4-pair PDs such IEEE 802.3bt and PoH. In addition, PD70224 can help identify at the physical layer itself whether a 2-pair PSE or a 4-pair PSE is providing power over the cable. It does this by sensing the voltage on the line (un-rectified) side of the pairs.

Active circuit with low forward-drop to replace dissipative passive diode bridges
Self-contained drive circuitry for MOSFETs
Designed to support IEEE 802.3af / at / bt and PoH
Integrated 0.16 Ohm N-channel MOSFETs for 0.3 Ohm total path resistance
‘Power-present’ indicator signals for identifying 4-pair bridge power
Low leakage, < 10 µA during detection
Wide operating voltage range up to 57V
-40°C to +85°C ambient
40 pins, 6mm x 8mm QFN
MSL3, RoHS compliant

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