

NEXPERIA PBSS8110Z,135
Manufacturer No:
PBSS8110Z,135
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
NPN 150°C TJ 100nA 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
Quantity:
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PBSS8110Z,135 information
NEXPERIA PBSS8110Z,135 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS8110Z,135.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 100V
- Number of Elements
- 1
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2003
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 1.4W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 100MHz
- Time@Peak Reflow Temperature-Max (s)
- 30
- Base Part Number
- PBSS8110
- Voltage
- 100V
- Element Configuration
- Single
- Current
- 1A
- Power Dissipation
- 1.4W
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 100V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 250mA 10V
- Current - Collector Cutoff (Max)
- 100nA
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 100mA, 1A
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 100V
- Collector Base Voltage (VCBO)
- 120V
- Emitter Base Voltage (VEBO)
- 5V
- Height
- 1.7mm
- Length
- 6.7mm
- Width
- 3.7mm
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for NEXPERIA PBSS8110Z,135.
Datasheets:
RohsStatement:
PBSS8110Z,135 Overview
In this device, the DC current gain is 150 @ 250mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS8110Z,135 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS8110Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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