

NEXPERIA PBSS5350D,115
Manufacturer No:
PBSS5350D,115
Manufacturer:
Package:
SC-74, SOT-457
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
Quantity:
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PBSS5350D,115 information
NEXPERIA PBSS5350D,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS5350D,115.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-74, SOT-457
- Number of Pins
- 6
- Weight
- 4.535924g
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 750mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 100MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- PBSS5350
- Pin Count
- 6
- Element Configuration
- Single
- Power Dissipation
- 750mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 2A 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage
- 50V
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 50V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 6V
- Height
- 6.35mm
- Length
- 6.35mm
- Width
- 6.35mm
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA PBSS5350D,115.
Datasheets:
PCN Packaging:
ReachStatement:
PBSS5350D,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.
PBSS5350D,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350D,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5350D,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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