

NEXPERIA PBSS5140U,115
Manufacturer No:
PBSS5140U,115
Manufacturer:
Package:
SC-70, SOT-323
Description:
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
Quantity:
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PBSS5140U,115 information
NEXPERIA PBSS5140U,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS5140U,115.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2001
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- HIGH RELIABILITY
- Max Power Dissipation
- 350mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 150MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- PBSS5140
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 350mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 300 @ 100mA 5V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage
- 40V
- Transition Frequency
- 150MHz
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 5V
- hFE Min
- 300
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA PBSS5140U,115.
Datasheets:
PCN Assembly/Origin:
PCN Packaging:
RohsStatement:
PBSS5140U,115 Overview
In this device, the DC current gain is 300 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBSS5140U,115 Features
the DC current gain for this device is 300 @ 100mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
PBSS5140U,115 Applications
There are a lot of Nexperia USA Inc.
PBSS5140U,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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