

NEXPERIA PBSS4320T,215
Manufacturer No:
PBSS4320T,215
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 150°C TJ 100nA ICBO 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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PBSS4320T,215 information
NEXPERIA PBSS4320T,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS4320T,215.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 4.535924g
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 20V
- Number of Elements
- 1
- hFEMin
- 220
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2002
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Power Dissipation
- 300mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 100MHz
- Base Part Number
- PBSS4320
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 1.2W
- Power - Max
- 540mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 20V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 220 @ 1A 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 310mV @ 300mA, 3A
- Transition Frequency
- 100MHz
- Max Breakdown Voltage
- 20V
- Collector Base Voltage (VCBO)
- 20V
- Emitter Base Voltage (VEBO)
- 5V
- Height
- 6.35mm
- Length
- 6.35mm
- Width
- 6.35mm
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for NEXPERIA PBSS4320T,215.
Datasheets:
PCN Packaging:
ReachStatement:
PBSS4320T,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 310mV @ 300mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
PBSS4320T,215 Features
the DC current gain for this device is 220 @ 1A 2V
the vce saturation(Max) is 310mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4320T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4320T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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