NEXPERIA PBSS4032PT,215

Manufacturer No:

PBSS4032PT,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP 150°C TJ 100nA 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

Quantity:

In Stock :2554

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 14 - Fri, May 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Step4：Individual Package

Step5：Anti-collision Filling

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

PBSS4032PT,215 Information

NEXPERIA PBSS4032PT,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS4032PT,215.

Type
Parameter

Factory Lead Time
4 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Transistor Element Material
SILICON

Collector-Emitter Breakdown Voltage
30V

Number of Elements
1

hFEMin
150

Operating Temperature
150°C TJ

Type
Parameter

Packaging
Cut Tape (CT)

Published
2009

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin (Sn)

Max Power Dissipation
1.1W

Terminal Position
DUAL

Terminal Form
GULL WING

Download datasheets and manufacturer documentation for NEXPERIA PBSS4032PT,215.

PBSS4032PT,215 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2.4A volts.

PBSS4032PT,215 Features

the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz