ONSEMI NTP75N03R
Manufacturer No:
NTP75N03R
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 8m ? @ 20A, 10V ±20V 1333pF @ 20V 13.2nC @ 5V TO-220-3
Quantity:
In Stock :7872
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 1 - Tue, Jun 2, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTP75N03R Information
ONSEMI NTP75N03R technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTP75N03R.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 25V
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
- Current Rating
- 75A
- Time@Peak Reflow Temperature-Max (s)
- 30
Download datasheets and manufacturer documentation for ONSEMI NTP75N03R.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTP75N03R Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 71.7 mJ.A device's maximal input capacitance is 1333pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 9.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 18.4 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 225A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTP75N03R Features
the avalanche energy rating (Eas) is 71.7 mJ
a continuous drain current (ID) of 9.7A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 18.4 ns
based on its rated peak drain current 225A.
NTP75N03R Applications
There are a lot of ON Semiconductor
NTP75N03R applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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