ONSEMI NTJS3157NT4

Manufacturer No:

NTJS3157NT4

Manufacturer:

ONSEMI

Package:

6-TSSOP, SC-88, SOT-363

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 60m ? @ 4A, 4.5V ±8V 500pF @ 10V 15nC @ 4.5V 6-TSSOP, SC-88, SOT-363

Quantity:

In Stock :2733

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

NTJS3157NT4 Information

ONSEMI NTJS3157NT4 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTJS3157NT4.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
6-TSSOP, SC-88, SOT-363

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Type
Parameter

Number of Terminations
6

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

Subcategory
FET General Purpose Power

Voltage - Rated DC
20V

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Download datasheets and manufacturer documentation for ONSEMI NTJS3157NT4.

NTJS3157NT4 Overview

A device's maximum input capacitance is 500pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.