ONSEMI NTD78N03T4
Manufacturer No:
NTD78N03T4
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6m ? @ 78A, 10V ±20V 2250pF @ 12V 35nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :7461
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTD78N03T4 Information
ONSEMI NTD78N03T4 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTD78N03T4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC
- 25V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 235
- Reach Compliance Code
- not_compliant
- Current Rating
- 78A
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for ONSEMI NTD78N03T4.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTD78N03T4 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 722.5 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2250pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 78A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 11.4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 210A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTD78N03T4 Features
the avalanche energy rating (Eas) is 722.5 mJ
a continuous drain current (ID) of 78A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 210A.
NTD78N03T4 Applications
There are a lot of ON Semiconductor
NTD78N03T4 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
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In-stock SKU
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