ONSEMI NTD18N06LT4
Manufacturer No:
NTD18N06LT4
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 65m ? @ 9A, 5V ±15V 675pF @ 25V 22nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :8584
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTD18N06LT4 Information
ONSEMI NTD18N06LT4 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTD18N06LT4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- Tin/Lead (Sn80Pb20)
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 60V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
Download datasheets and manufacturer documentation for ONSEMI NTD18N06LT4.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTD18N06LT4 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 675pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 18A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 54A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.A device like this reduces its overall power consumption when it uses drive voltage (5V).
NTD18N06LT4 Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 54A.
NTD18N06LT4 Applications
There are a lot of ON Semiconductor
NTD18N06LT4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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