ONSEMI NTB90N02T4
Manufacturer No:
NTB90N02T4
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.8m ? @ 90A, 10V ±20V 2120pF @ 20V 29nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :5841
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTB90N02T4 Information
ONSEMI NTB90N02T4 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTB90N02T4.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 24V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI NTB90N02T4.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTB90N02T4 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 733 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2120pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.With a drain-source breakdown voltage of 24V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 24V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTB90N02T4 Features
the avalanche energy rating (Eas) is 733 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 200A.
NTB90N02T4 Applications
There are a lot of ON Semiconductor
NTB90N02T4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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