ONSEMI NTB5605P
Manufacturer No:
NTB5605P
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) P-Channel Tube 140m ? @ 8.5A, 5V ±20V 1190pF @ 25V 22nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1484
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTB5605P Information
ONSEMI NTB5605P technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTB5605P.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Published
- 2008
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 235
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI NTB5605P.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTB5605P Overview
A device's maximal input capacitance is 1190pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 18.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 17A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 55A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V).
NTB5605P Features
a continuous drain current (ID) of 18.5A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 55A.
a 60V drain to source voltage (Vdss)
NTB5605P Applications
There are a lot of ON Semiconductor
NTB5605P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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