ONSEMI NTB13N10
Manufacturer No:
NTB13N10
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tube 165m ? @ 6.5A, 10V ±20V 550pF @ 25V 20nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1699
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Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NTB13N10 Information
ONSEMI NTB13N10 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NTB13N10.
- Type
- Parameter
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type
- Surface Mount
- Mount
- Surface Mount
- Transistor Element Material
- SILICON
- Published
- 2005
- Packaging
- Tube
- Operating Temperature
- -55°C~175°C TJ
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Powers
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 235
- Reach Compliance Code
- not_compliant
- Current Rating
- 13A
Download datasheets and manufacturer documentation for ONSEMI NTB13N10.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
NTB13N10 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 85 mJ.A device's maximum input capacitance is 550pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.Its maximum pulsed drain current is 39A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
NTB13N10 Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 39A.
NTB13N10 Applications
There are a lot of ON Semiconductor
NTB13N10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)