ONSEMI NSS1C200MZ4T3G
Manufacturer No:
NSS1C200MZ4T3G
Manufacturer:
ONSEMI
Package:
TO-261-4, TO-261AA
Description:
Low V<sub>CE(sat)</sub> Transistor, PNP, 100 V, 2.0 A
Quantity:
In Stock :8894
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NSS1C200MZ4T3G Information
ONSEMI NSS1C200MZ4T3G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NSS1C200MZ4T3G.
- Type
- Parameter
- VCBO (V)
- 140
- VBE(on) (V)
- 0.85
- fT Min (MHz)
- 100
- Package Type
- SOT-223-4 / TO-261-4D
- MSL Type
- 1
- VCE(sat) Max (V)
- 0.125
- VBE(sat) (V)
- 0.95
- hFE Min
- 120
- PTM Max (W)
- 2
- Case Outline
- 0.0318
- Type
- Parameter
- IC Cont. (A)
- 2
- VEBO (V)
- 7
- hFE Max
- 360
- MSL Temp (°C)
- 260
- Container Qty.
- 4000
- Polarity
- PNP
- Type
- Low VCE(sat)
- VCEO Min (V)
- 100
- Container Type
- REEL
Download datasheets and manufacturer documentation for ONSEMI NSS1C200MZ4T3G.
Datasheet:
Package Drawing:
Low VCE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Application
- Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
End Product
- Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
Feature
- High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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