

Renesas NP90N04VUG-E1-AY
Manufacturer No:
NP90N04VUG-E1-AY
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4m ? @ 45A, 10V ±20V 7500pF @ 25V 135nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
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NP90N04VUG-E1-AY information
Renesas NP90N04VUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP90N04VUG-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2008
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 1.2W Ta 105W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1.2W
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 4m ? @ 45A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 7500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 90A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 135nC @ 10V
- Rise Time
- 20ns
- Drain to Source Voltage (Vdss)
- 40V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 11 ns
- Turn-Off Delay Time
- 65 ns
- Continuous Drain Current (ID)
- 90A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.004Ohm
- Pulsed Drain Current-Max (IDM)
- 300A
- DS Breakdown Voltage-Min
- 40V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas NP90N04VUG-E1-AY.
ConflictMineralStatement:
NP90N04VUG-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 300A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP90N04VUG-E1-AY Features
a continuous drain current (ID) of 90A
the turn-off delay time is 65 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
NP90N04VUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP90N04VUG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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