Renesas NP88N075KUE-E1-AY
Manufacturer No:
NP88N075KUE-E1-AY
Manufacturer:
Renesas
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5m ? @ 44A, 10V ±20V 12300pF @ 25V 230nC @ 10V 75V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :3341
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP88N075KUE-E1-AY Information
Renesas NP88N075KUE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP88N075KUE-E1-AY.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for Renesas NP88N075KUE-E1-AY.
NP88N075KUE-E1-AY Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12300pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 88A.There is a peak drain current of 352A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.The transistor must receive a 75V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP88N075KUE-E1-AY Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 352A.
a 75V drain to source voltage (Vdss)
NP88N075KUE-E1-AY Applications
There are a lot of Renesas Electronics America
NP88N075KUE-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)