

Renesas NP88N04KUG-E1-AY
Manufacturer No:
NP88N04KUG-E1-AY
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.9m ? @ 44A, 10V ±20V 15000pF @ 25V 250nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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NP88N04KUG-E1-AY information
Renesas NP88N04KUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP88N04KUG-E1-AY.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Pin Count
- 3
- Configuration
- Single
- Power Dissipation-Max
- 1.8W Ta 200W Tc
- Turn On Delay Time
- 43 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2.9m ? @ 44A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 15000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 88A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 250nC @ 10V
- Rise Time
- 104ns
- Drain to Source Voltage (Vdss)
- 40V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 22 ns
- Turn-Off Delay Time
- 107 ns
- Continuous Drain Current (ID)
- 88A
- Gate to Source Voltage (Vgs)
- 20V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas NP88N04KUG-E1-AY.
ConflictMineralStatement:
NP88N04KUG-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 107 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 43 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP88N04KUG-E1-AY Features
a continuous drain current (ID) of 88A
the turn-off delay time is 107 ns
a 40V drain to source voltage (Vdss)
NP88N04KUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP88N04KUG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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