Renesas NP83P04PDG-E1-AY
Manufacturer No:
NP83P04PDG-E1-AY
Manufacturer:
Renesas
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 5.3m ? @ 41.5A, 10V 9820pF @ 10V 200nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :4297
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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NP83P04PDG-E1-AY Information
Renesas NP83P04PDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP83P04PDG-E1-AY.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Packaging
- Cut Tape (CT)
- Published
- 2007
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Type
- Parameter
- HTS Code
- 8541.29.00.95
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1.8W
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Renesas NP83P04PDG-E1-AY.
Datasheets:
ConflictMineralStatement:
NP83P04PDG-E1-AY Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 315 mJ.The maximum input capacitance of this device is 9820pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 83A.There is no pulsed drain current maximum for this device based on its rated peak drain current 249A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.
NP83P04PDG-E1-AY Features
the avalanche energy rating (Eas) is 315 mJ
a continuous drain current (ID) of 83A
based on its rated peak drain current 249A.
a 40V drain to source voltage (Vdss)
NP83P04PDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP83P04PDG-E1-AY applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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