Renesas NP80N055NDG-S18-AY
Manufacturer No:
NP80N055NDG-S18-AY
Manufacturer:
Renesas
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 6.9m ? @ 40A, 10V ±20V 6900pF @ 25V 135nC @ 10V 55V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :2243
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 4 - Fri, Jun 5, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP80N055NDG-S18-AY Information
Renesas NP80N055NDG-S18-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP80N055NDG-S18-AY.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- Published
- 2009
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for Renesas NP80N055NDG-S18-AY.
ConflictMineralStatement:
NP80N055NDG-S18-AY Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6900pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 77 ns.Peak drain current is 200A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NP80N055NDG-S18-AY Features
a continuous drain current (ID) of 80A
the turn-off delay time is 77 ns
based on its rated peak drain current 200A.
a 55V drain to source voltage (Vdss)
NP80N055NDG-S18-AY Applications
There are a lot of Renesas Electronics America
NP80N055NDG-S18-AY applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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