Rochester NP80N04PDG-E1B-AY
Manufacturer No:
NP80N04PDG-E1B-AY
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.5mOhm @ 40A, 10V 6.9pF @ 25V 135nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :6677
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP80N04PDG-E1B-AY Information
Rochester NP80N04PDG-E1B-AY technical specifications, attributes, parameters and parts with similar specifications to Rochester NP80N04PDG-E1B-AY.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263-3
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1.8W Ta 115W Tc
- FET Type
- N-Channel
- Type
- Parameter
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 6.9pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 80A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 135nC @ 10V
- Drain to Source Voltage (Vdss)
- 40V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Rochester NP80N04PDG-E1B-AY.
NP80N04PDG-E1B-AY Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6.9pF @ 25V.Operating this transistor requires a 40V drain to source voltage (Vdss).
NP80N04PDG-E1B-AY Features
a 40V drain to source voltage (Vdss)
NP80N04PDG-E1B-AY Applications
There are a lot of Rochester Electronics, LLC
NP80N04PDG-E1B-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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12.28 M
Listed Part Number
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In-stock SKU
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