Rochester NP80N04NDG-S18-AY
Manufacturer No:
NP80N04NDG-S18-AY
Manufacturer:
Rochester
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 4.8mOhm @ 40A, 10V 6.9pF @ 25V 135nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :8633
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP80N04NDG-S18-AY Information
Rochester NP80N04NDG-S18-AY technical specifications, attributes, parameters and parts with similar specifications to Rochester NP80N04NDG-S18-AY.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package
- TO-262
- Operating Temperature
- 175°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1.8W Ta 115W Tc
- FET Type
- N-Channel
- Type
- Parameter
- Rds On (Max) @ Id, Vgs
- 4.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 6.9pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 80A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 135nC @ 10V
- Drain to Source Voltage (Vdss)
- 40V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Rochester NP80N04NDG-S18-AY.
NP80N04NDG-S18-AY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6.9pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 40V.
NP80N04NDG-S18-AY Features
a 40V drain to source voltage (Vdss)
NP80N04NDG-S18-AY Applications
There are a lot of Rochester Electronics, LLC
NP80N04NDG-S18-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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