Renesas NP80N04KHE-E1-AY
Manufacturer No:
NP80N04KHE-E1-AY
Manufacturer:
Renesas
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 40A, 10V ±20V 3300pF @ 25V 60nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :4129
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Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP80N04KHE-E1-AY Information
Renesas NP80N04KHE-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP80N04KHE-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Renesas NP80N04KHE-E1-AY.
Datasheets:
ConflictMineralStatement:
NP80N04KHE-E1-AY Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3300pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 44 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
NP80N04KHE-E1-AY Features
a continuous drain current (ID) of 80A
the turn-off delay time is 44 ns
a 40V drain to source voltage (Vdss)
NP80N04KHE-E1-AY Applications
There are a lot of Renesas Electronics America
NP80N04KHE-E1-AY applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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