Renesas NP75P04YLG-E2-AY
Manufacturer No:
NP75P04YLG-E2-AY
Manufacturer:
Renesas
Package:
Description:
Pch Power MOSFET -40V -75A 9.7mohm Power SON-8 5x6 for Automotive
Quantity:
In Stock :1383
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Shipped from：HK Warehouse
Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP75P04YLG-E2-AY Information
Renesas NP75P04YLG-E2-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP75P04YLG-E2-AY.
- Type
- Parameter
- Lead Count (#)
- 8
- Carrier Type
- Embossed Tape
- Moisture Sensitivity Level (MSL)
- 1
- Pb (Lead) Free
- Yes
- Channels (#)
- 1
- Ciss (Typical) (pF)
- 3200
- ID (A)
- -75
- Lead Compliant
- No
- Length (mm)
- 5
- MOQ
- 2500
- Type
- Parameter
- Mounting Type
- Surface Mount
- Nch/Pch
- Pch
- Pch (W)
- 138
- Pkg. Dimensions (mm)
- 5 x 5 x 1.45
- Pkg. Type
- HSON
- Qg typ (nC)
- 91
- Qualification Level
- Automotive
- RDS (ON) (Max) @10V or 8V (mohm)
- 9.7
- RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)
- 14
- RDS (ON) (Typical) @ 10V / 8V (mohm)
- 7.7
Download datasheets and manufacturer documentation for Renesas NP75P04YLG-E2-AY.
The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
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12.28 M
Listed Part Number
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