Renesas NP75N04YUG-E1-AY
Renesas NP75N04YUG-E1-AY

Renesas NP75N04YUG-E1-AY

Manufacturer No:

NP75N04YUG-E1-AY

Manufacturer:

Renesas

Package:

8-SMD, Flat Lead Exposed Pad

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.8m ? @ 37.5A, 10V ±20V 6450pF @ 25V 116nC @ 10V 40V 8-SMD, Flat Lead Exposed Pad

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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NP75N04YUG-E1-AY information

Renesas NP75N04YUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP75N04YUG-E1-AY.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • 8-SMD, Flat Lead Exposed Pad
  • Number of Pins
  • 8
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2010
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 5
  • ECCN Code
  • EAR99
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • DUAL
  • Pin Count
  • 8
  • JESD-30 Code
  • R-PDSO-F5
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
  • 1W Ta 138W Tc
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 1W
  • Case Connection
  • DRAIN
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 4.8m ? @ 37.5A, 10V
  • Vgs(th) (Max) @ Id
  • 4V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 6450pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 116nC @ 10V
  • Rise Time
  • 10ns
  • Drain to Source Voltage (Vdss)
  • 40V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 10V
  • Vgs (Max)
  • ±20V
  • Fall Time (Typ)
  • 6 ns
  • Turn-Off Delay Time
  • 66 ns
  • Continuous Drain Current (ID)
  • 75A
  • Gate to Source Voltage (Vgs)
  • 20V
  • DS Breakdown Voltage-Min
  • 40V
  • Feedback Cap-Max (Crss)
  • 450 pF
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP75N04YUG-E1-AY.

NP75N04YUG-E1-AY Overview


A device's maximal input capacitance is 6450pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 66 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

NP75N04YUG-E1-AY Features


a continuous drain current (ID) of 75A
the turn-off delay time is 66 ns
a 40V drain to source voltage (Vdss)


NP75N04YUG-E1-AY Applications


There are a lot of Renesas Electronics America
NP75N04YUG-E1-AY applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

User Guide

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

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Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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Step6:Packaging Box

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