Renesas NP75N04YLG-E1-AY
Manufacturer No:
NP75N04YLG-E1-AY
Manufacturer:
Package:
8-PowerLDFN
Description:
MOSFET (Metal Oxide) N-Channel 4.8mOhm @ 38A, 10V ±20V 6450 pF @ 25 V 116 nC @ 10 V 40 V 8-PowerLDFN
Quantity:
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NP75N04YLG-E1-AY Information
Renesas NP75N04YLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP75N04YLG-E1-AY.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerLDFN
- Supplier Device Package
- 8-HSON (5x5.4)
- Mfr
- Renesas Electronics America Inc
- Package
- Digi-Reel?
- Product Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Power Dissipation (Max)
- 138W (Ta)
- Operating Temperature
- 175°C
- Technology
- MOSFET (Metal Oxide)
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 4.8mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 6450 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C
- 75A (Ta)
- Gate Charge (Qg) (Max) @ Vgs
- 116 nC @ 10 V
- Drain to Source Voltage (Vdss)
- 40 V
- Vgs (Max)
- ±20V
Download datasheets and manufacturer documentation for Renesas NP75N04YLG-E1-AY.
NP75N04YLG-E1-AY Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6450 pF @ 25 V.Operating this transistor requires a 40 V drain to source voltage (Vdss).
NP75N04YLG-E1-AY Features
a 40 V drain to source voltage (Vdss)
NP75N04YLG-E1-AY Applications
There are a lot of Renesas Electronics America Inc
NP75N04YLG-E1-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
NP75N04YLG-E1-AY Relevant information
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