Renesas NP60N03KUG-E1-AY
Manufacturer No:
NP60N03KUG-E1-AY
Manufacturer:
Renesas
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.8m ? @ 30A, 10V ±20V 5300pF @ 25V 93nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :2593
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP60N03KUG-E1-AY Information
Renesas NP60N03KUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP60N03KUG-E1-AY.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2004
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Type
- Parameter
- Technology
- MOSFET (Metal Oxide)
- Pin Count
- 3
- Number of Elements
- 1
- Configuration
- Single
- Power Dissipation-Max
- 1.8W Ta 88W Tc
- Power Dissipation
- 1.8W
- Turn On Delay Time
- 32 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 4.8m ? @ 30A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
Download datasheets and manufacturer documentation for Renesas NP60N03KUG-E1-AY.
ConflictMineralStatement:
NP60N03KUG-E1-AY Overview
A device's maximum input capacitance is 5300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 60A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 73 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
NP60N03KUG-E1-AY Features
a continuous drain current (ID) of 60A
the turn-off delay time is 73 ns
a 30V drain to source voltage (Vdss)
NP60N03KUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP60N03KUG-E1-AY applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
