Renesas NP50P06KDG-E1-AY

Manufacturer No:

NP50P06KDG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 17m ? @ 25A, 10V ±20V 5000pF @ 10V 95nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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NP50P06KDG-E1-AY information

Renesas NP50P06KDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP50P06KDG-E1-AY.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.8W Ta 90W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.8W

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
17m ? @ 25A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 10V

Current - Continuous Drain (Id) @ 25°C
50A Tc

Gate Charge (Qg) (Max) @ Vgs
95nC @ 10V

Rise Time
45ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
270 ns

Turn-Off Delay Time
405 ns

Continuous Drain Current (ID)
50A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.023Ohm

DS Breakdown Voltage-Min
60V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas NP50P06KDG-E1-AY.

Datasheets:

renesaselectronicsamerica-np50p06kdge1ay-datasheets-4404.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP50P06KDG-E1-AY Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5000pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 405 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

NP50P06KDG-E1-AY Features

a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 60V drain to source voltage (Vdss)

NP50P06KDG-E1-AY Applications

There are a lot of Renesas Electronics America
NP50P06KDG-E1-AY applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

User Guide

PURCHASE

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.