

Renesas NP50P04SDG-E1-AY
Manufacturer No:
NP50P04SDG-E1-AY
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 9.6m ? @ 25A, 10V ±20V 5000pF @ 10V 100nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
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NP50P04SDG-E1-AY information
Renesas NP50P04SDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP50P04SDG-E1-AY.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 1.2W Ta 84W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1.2W
- Turn On Delay Time
- 13 ns
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 9.6m ? @ 25A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 5000pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 50A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Rise Time
- 13ns
- Drain to Source Voltage (Vdss)
- 40V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 180 ns
- Turn-Off Delay Time
- 405 ns
- Continuous Drain Current (ID)
- 50A
- Gate to Source Voltage (Vgs)
- 20V
- DS Breakdown Voltage-Min
- 40V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas NP50P04SDG-E1-AY.
ConflictMineralStatement:
NP50P04SDG-E1-AY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5000pF @ 10V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 405 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NP50P04SDG-E1-AY Features
a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 40V drain to source voltage (Vdss)
NP50P04SDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP50P04SDG-E1-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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