Renesas NP50P04KDG-E1-AY

Manufacturer No:

NP50P04KDG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 10m ? @ 25A, 10V ±20V 5100pF @ 10V 100nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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NP50P04KDG-E1-AY information

Renesas NP50P04KDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP50P04KDG-E1-AY.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.8W Ta 90W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.8W

Case Connection
DRAIN

Turn On Delay Time
20 ns

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
10m ? @ 25A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
5100pF @ 10V

Current - Continuous Drain (Id) @ 25°C
50A Tc

Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V

Rise Time
45ns

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
230 ns

Turn-Off Delay Time
405 ns

Continuous Drain Current (ID)
50A

Gate to Source Voltage (Vgs)
20V

DS Breakdown Voltage-Min
40V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas NP50P04KDG-E1-AY.

Datasheets:

renesaselectronicsamerica-np50p04kdge1ay-datasheets-4400.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP50P04KDG-E1-AY Overview

The maximum input capacitance of this device is 5100pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 405 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

NP50P04KDG-E1-AY Features

a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 40V drain to source voltage (Vdss)

NP50P04KDG-E1-AY Applications

There are a lot of Renesas Electronics America
NP50P04KDG-E1-AY applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

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