Renesas NP50P04KDG-E1-AY
Manufacturer No:
NP50P04KDG-E1-AY
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 10m ? @ 25A, 10V ±20V 5100pF @ 10V 100nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
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NP50P04KDG-E1-AY Information
Renesas NP50P04KDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP50P04KDG-E1-AY.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 1.8W Ta 90W Tc
Download datasheets and manufacturer documentation for Renesas NP50P04KDG-E1-AY.
ConflictMineralStatement:
NP50P04KDG-E1-AY Overview
The maximum input capacitance of this device is 5100pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 405 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NP50P04KDG-E1-AY Features
a continuous drain current (ID) of 50A
the turn-off delay time is 405 ns
a 40V drain to source voltage (Vdss)
NP50P04KDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP50P04KDG-E1-AY applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
NP50P04KDG-E1-AY Relevant information
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