Renesas NP36P04SDG-E1-AY

Manufacturer No:

NP36P04SDG-E1-AY

Manufacturer:

Renesas

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 17m ? @ 18A, 10V ±20V 2800pF @ 10V 55nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

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NP36P04SDG-E1-AY information

Renesas NP36P04SDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP36P04SDG-E1-AY.

Type
Parameter

Factory Lead Time
26 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2008

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.2W Ta 56W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.2W

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
17m ? @ 18A, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2800pF @ 10V

Current - Continuous Drain (Id) @ 25°C
36A Tc

Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V

Rise Time
10ns

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
140 ns

Turn-Off Delay Time
250 ns

Continuous Drain Current (ID)
36A

JEDEC-95 Code
TO-252AA

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.0235Ohm

DS Breakdown Voltage-Min
40V

Avalanche Energy Rating (Eas)
67 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP36P04SDG-E1-AY.

Datasheets:

renesaselectronicsamerica-np36p04sdge1ay-datasheets-4627.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP36P04SDG-E1-AY Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 67 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2800pF @ 10V.This device has a continuous drain current (ID) of [36A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 250 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NP36P04SDG-E1-AY Features

the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 250 ns
a 40V drain to source voltage (Vdss)

NP36P04SDG-E1-AY Applications

There are a lot of Renesas Electronics America
NP36P04SDG-E1-AY applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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