Renesas NP36P04KDG-E1-AY
Manufacturer No:
NP36P04KDG-E1-AY
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 17m ? @ 18A, 10V ±20V 2800pF @ 10V 55nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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NP36P04KDG-E1-AY information
Renesas NP36P04KDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP36P04KDG-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 1.8W Ta 56W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1.8W
- Case Connection
- DRAIN
- FET Type
- P-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 17m ? @ 18A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 2800pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 36A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 55nC @ 10V
- Rise Time
- 10ns
- Drain to Source Voltage (Vdss)
- 40V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 140 ns
- Turn-Off Delay Time
- 250 ns
- Continuous Drain Current (ID)
- 36A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.0235Ohm
- DS Breakdown Voltage-Min
- 40V
- Avalanche Energy Rating (Eas)
- 72 mJ
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas NP36P04KDG-E1-AY.
ConflictMineralStatement:
NP36P04KDG-E1-AY Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 72 mJ.A device's maximal input capacitance is 2800pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 36A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 250 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NP36P04KDG-E1-AY Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 250 ns
a 40V drain to source voltage (Vdss)
NP36P04KDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP36P04KDG-E1-AY applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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