Renesas NP20P06SLG-E1-AY

Manufacturer No:

NP20P06SLG-E1-AY

Manufacturer:

Renesas

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 48m ? @ 10A, 10V ±20V 1650pF @ 10V 34nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

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NP20P06SLG-E1-AY information

Renesas NP20P06SLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP20P06SLG-E1-AY.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
MATTE TIN

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.2W Ta 38W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
8 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
48m ? @ 10A, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 10V

Current - Continuous Drain (Id) @ 25°C
20A Tc

Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V

Rise Time
8ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
80 ns

Turn-Off Delay Time
160 ns

Continuous Drain Current (ID)
20A

JEDEC-95 Code
TO-252AA

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.064Ohm

Pulsed Drain Current-Max (IDM)
60A

DS Breakdown Voltage-Min
60V

Avalanche Energy Rating (Eas)
28 mJ

Radiation Hardening
No

Download datasheets and manufacturer documentation for Renesas NP20P06SLG-E1-AY.

Datasheets:

renesaselectronicsamerica-np20p06slge1ay-datasheets-4277.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP20P06SLG-E1-AY Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 28 mJ.A device's maximal input capacitance is 1650pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 20A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 160 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 60A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NP20P06SLG-E1-AY Features

the avalanche energy rating (Eas) is 28 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 160 ns
based on its rated peak drain current 60A.
a 60V drain to source voltage (Vdss)

NP20P06SLG-E1-AY Applications

There are a lot of Renesas Electronics America
NP20P06SLG-E1-AY applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

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