Renesas NP20P04SLG-E1-AY

Manufacturer No:

NP20P04SLG-E1-AY

Manufacturer:

Renesas

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 25m ? @ 10A, 10V ±20V 1650pF @ 10V 34nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

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NP20P04SLG-E1-AY information

Renesas NP20P04SLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP20P04SLG-E1-AY.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
1997

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.2W Ta 38W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.2W

Case Connection
DRAIN

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
25m ? @ 10A, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 10V

Current - Continuous Drain (Id) @ 25°C
20A Tc

Gate Charge (Qg) (Max) @ Vgs
34nC @ 10V

Rise Time
6ns

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
80 ns

Turn-Off Delay Time
160 ns

Continuous Drain Current (ID)
20A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.038Ohm

Pulsed Drain Current-Max (IDM)
60A

DS Breakdown Voltage-Min
40V

Avalanche Energy Rating (Eas)
40 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas NP20P04SLG-E1-AY.

Datasheets:

renesaselectronicsamerica-np20p04slge1ay-datasheets-4296.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP20P04SLG-E1-AY Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 40 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1650pF @ 10V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 160 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

NP20P04SLG-E1-AY Features

the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 160 ns
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)

NP20P04SLG-E1-AY Applications

There are a lot of Renesas Electronics America
NP20P04SLG-E1-AY applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

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