Renesas NP20P04SLG-E1-AY
Manufacturer No:
NP20P04SLG-E1-AY
Manufacturer:
Renesas
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 25m ? @ 10A, 10V ±20V 1650pF @ 10V 34nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :3788
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NP20P04SLG-E1-AY Information
Renesas NP20P04SLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP20P04SLG-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material
- SILICON
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1997
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for Renesas NP20P04SLG-E1-AY.
ConflictMineralStatement:
NP20P04SLG-E1-AY Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 40 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1650pF @ 10V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 160 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 60A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NP20P04SLG-E1-AY Features
the avalanche energy rating (Eas) is 40 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 160 ns
based on its rated peak drain current 60A.
a 40V drain to source voltage (Vdss)
NP20P04SLG-E1-AY Applications
There are a lot of Renesas Electronics America
NP20P04SLG-E1-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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