Renesas NP180N04TUG-E1-AY

Manufacturer No:

NP180N04TUG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-7, D2Pak (6 Leads + Tab)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.5m ? @ 90A, 10V ±20V 25700pF @ 25V 390nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)

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NP180N04TUG-E1-AY information

Renesas NP180N04TUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP180N04TUG-E1-AY.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-7, D2Pak (6 Leads + Tab)

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e3

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

ECCN Code
EAR99

Terminal Finish
MATTE TIN

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
7

JESD-30 Code
R-PSSO-G6

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.8W Ta 288W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.8W

Turn On Delay Time
54 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
1.5m ? @ 90A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
25700pF @ 25V

Current - Continuous Drain (Id) @ 25°C
180A Tc

Gate Charge (Qg) (Max) @ Vgs
390nC @ 10V

Rise Time
43ns

Drain to Source Voltage (Vdss)
40V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
21 ns

Turn-Off Delay Time
104 ns

Continuous Drain Current (ID)
180A

Gate to Source Voltage (Vgs)
20V

Pulsed Drain Current-Max (IDM)
720A

DS Breakdown Voltage-Min
40V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas NP180N04TUG-E1-AY.

Datasheets:

renesas-np180n04tuge1ay-datasheets-7117.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP180N04TUG-E1-AY Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 25700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 180A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 104 ns.Peak drain current is 720A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 54 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

NP180N04TUG-E1-AY Features

a continuous drain current (ID) of 180A
the turn-off delay time is 104 ns
based on its rated peak drain current 720A.
a 40V drain to source voltage (Vdss)

NP180N04TUG-E1-AY Applications

There are a lot of Renesas Electronics America
NP180N04TUG-E1-AY applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

User Guide

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