NP160N04TUG-E1-AY-Renesas-Price, Stock & Datasheet

NP160N04TUG-E1-AY Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 372 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 94 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 640A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 47 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

NP160N04TUG-E1-AY Features

the avalanche energy rating (Eas) is 372 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 94 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)

NP160N04TUG-E1-AY Applications

There are a lot of Renesas Electronics America
NP160N04TUG-E1-AY applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

Renesas NP160N04TUG-E1-AY

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