Renesas NP15P06SLG-E1-AY

Manufacturer No:

NP15P06SLG-E1-AY

Manufacturer:

Renesas

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 70m ? @ 7.5A, 10V ±20V 1100pF @ 10V 23nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

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NP15P06SLG-E1-AY information

Renesas NP15P06SLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP15P06SLG-E1-AY.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2008

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
MATTE TIN

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.2W Ta 30W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
7 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
70m ? @ 7.5A, 10V

Vgs(th) (Max) @ Id
2.5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 10V

Current - Continuous Drain (Id) @ 25°C
15A Ta

Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V

Rise Time
5ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
65 ns

Turn-Off Delay Time
100 ns

Continuous Drain Current (ID)
15A

JEDEC-95 Code
TO-252AA

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.095Ohm

Pulsed Drain Current-Max (IDM)
45A

DS Breakdown Voltage-Min
60V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP15P06SLG-E1-AY.

Datasheets:

renesaselectronicsamerica-np15p06slge1ay-datasheets-4319.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP15P06SLG-E1-AY Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1100pF @ 10V.This device has a continuous drain current (ID) of [15A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.A maximum pulsed drain current of 45A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NP15P06SLG-E1-AY Features

a continuous drain current (ID) of 15A
the turn-off delay time is 100 ns
based on its rated peak drain current 45A.
a 60V drain to source voltage (Vdss)

NP15P06SLG-E1-AY Applications

There are a lot of Renesas Electronics America
NP15P06SLG-E1-AY applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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