Renesas NP110N055PUJ-E1B-AY

Manufacturer No:

NP110N055PUJ-E1B-AY

Manufacturer:

Renesas

Package:

Description:

Tape & Reel (TR)

Quantity:

Delivery:

Payment:

In Stock :Available

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NP110N055PUJ-E1B-AY information

Renesas NP110N055PUJ-E1B-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP110N055PUJ-E1B-AY.

Type
Parameter

Surface Mount
YES

Transistor Element Material
SILICON

Packaging
Tape & Reel (TR)

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
Vendor Undefined

Number of Terminations
2

ECCN Code
EAR99

HTS Code
8541.29.00.95

Subcategory
FET General Purpose Power

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

JESD-30 Code
R-PSSO-G2

Qualification Status
Not Qualified

Operating Temperature (Max)
175°C

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Transistor Application
SWITCHING

Polarity/Channel Type
N-CHANNEL

JEDEC-95 Code
TO-263AB

Drain-source On Resistance-Max
0.0024Ohm

Pulsed Drain Current-Max (IDM)
440A

DS Breakdown Voltage-Min
55V

Avalanche Energy Rating (Eas)
435 mJ

FET Technology
METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)
288W

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP110N055PUJ-E1B-AY.

Datasheets:

renesaselectronicsamerica-np110n055puje1bay-datasheets-5386.pdf

NP110N055PUJ-E1B-AY Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 435 mJ.The drain current is the maximum continuous current this device can conduct, which is 110A.Pulsed drain current is maximum rated peak drain current 440A.A normal operation of the DS requires keeping the breakdown voltage above 55V.

NP110N055PUJ-E1B-AY Features

the avalanche energy rating (Eas) is 435 mJ
based on its rated peak drain current 440A.

NP110N055PUJ-E1B-AY Applications

There are a lot of Renesas Electronics America
NP110N055PUJ-E1B-AY applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

MEANS OF PAYMENT

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.