Renesas NP110N055PUG-E1-AY
Renesas NP110N055PUG-E1-AY

Renesas NP110N055PUG-E1-AY

Manufacturer No:

NP110N055PUG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m ? @ 55A, 10V ±20V 25700pF @ 25V 380nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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NP110N055PUG-E1-AY information

Renesas NP110N055PUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP110N055PUG-E1-AY.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 175°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2004
  • JESD-609 Code
  • e3
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 2
  • ECCN Code
  • EAR99
  • Terminal Finish
  • MATTE TIN
  • HTS Code
  • 8541.29.00.95
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Terminal Form
  • GULL WING
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSSO-G2
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
  • 1.8W Ta 288W Tc
  • Operating Mode
  • ENHANCEMENT MODE
  • Turn On Delay Time
  • 63 ns
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 2.4m ? @ 55A, 10V
  • Vgs(th) (Max) @ Id
  • 4V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 25700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 110A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 380nC @ 10V
  • Rise Time
  • 201ns
  • Drain to Source Voltage (Vdss)
  • 55V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 10V
  • Vgs (Max)
  • ±20V
  • Fall Time (Typ)
  • 19 ns
  • Turn-Off Delay Time
  • 131 ns
  • Continuous Drain Current (ID)
  • 110A
  • Gate to Source Voltage (Vgs)
  • 20V
  • Drain-source On Resistance-Max
  • 0.0028Ohm
  • Pulsed Drain Current-Max (IDM)
  • 440A
  • DS Breakdown Voltage-Min
  • 55V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for Renesas NP110N055PUG-E1-AY.

Datasheets:

ConflictMineralStatement:

NP110N055PUG-E1-AY Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 25700pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 131 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 440A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 63 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

NP110N055PUG-E1-AY Features


a continuous drain current (ID) of 110A
the turn-off delay time is 131 ns
based on its rated peak drain current 440A.
a 55V drain to source voltage (Vdss)


NP110N055PUG-E1-AY Applications


There are a lot of Renesas Electronics America
NP110N055PUG-E1-AY applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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