Renesas NP109N055PUK-E1-AY
Manufacturer No:
NP109N055PUK-E1-AY
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.2m ? @ 55A, 10V ±20V 11250pF @ 25V 189nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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NP109N055PUK-E1-AY information
Renesas NP109N055PUK-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP109N055PUK-E1-AY.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Operating Temperature
- 175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- Configuration
- Single
- Power Dissipation-Max
- 1.8W Ta 250W Tc
- Turn On Delay Time
- 30 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2.2m ? @ 55A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 11250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 110A Tc
- Rise Time
- 14ns
- Drain to Source Voltage (Vdss)
- 55V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 11 ns
- Turn-Off Delay Time
- 105 ns
- Continuous Drain Current (ID)
- 110A
- Gate to Source Voltage (Vgs)
- 20V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas NP109N055PUK-E1-AY.
ConflictMineralStatement:
NP109N055PUK-E1-AY Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11250pF @ 25V.This device has a continuous drain current (ID) of [110A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 105 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 55V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
NP109N055PUK-E1-AY Features
a continuous drain current (ID) of 110A
the turn-off delay time is 105 ns
a 55V drain to source voltage (Vdss)
NP109N055PUK-E1-AY Applications
There are a lot of Renesas Electronics America
NP109N055PUK-E1-AY applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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