Renesas NP100P06PLG-E1-AY

Manufacturer No:

NP100P06PLG-E1-AY

Manufacturer:

Renesas

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 6m ? @ 50A, 10V ±20V 15000pF @ 10V 300nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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NP100P06PLG-E1-AY information

Renesas NP100P06PLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP100P06PLG-E1-AY.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
175°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e3

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
MATTE TIN

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1.8W Ta 200W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.8W

Turn On Delay Time
28 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
6m ? @ 50A, 10V

Vgs(th) (Max) @ Id
2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 10V

Current - Continuous Drain (Id) @ 25°C
100A Tc

Gate Charge (Qg) (Max) @ Vgs
300nC @ 10V

Rise Time
35ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
100 ns

Turn-Off Delay Time
275 ns

Continuous Drain Current (ID)
100A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.0078Ohm

Pulsed Drain Current-Max (IDM)
300A

DS Breakdown Voltage-Min
60V

Avalanche Energy Rating (Eas)
420 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP100P06PLG-E1-AY.

Datasheets:

renesaselectronicsamerica-np100p06plge1ay-datasheets-4285.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

NP100P06PLG-E1-AY Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 420 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 15000pF @ 10V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 275 ns.A maximum pulsed drain current of 300A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 28 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NP100P06PLG-E1-AY Features

the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 275 ns
based on its rated peak drain current 300A.
a 60V drain to source voltage (Vdss)

NP100P06PLG-E1-AY Applications

There are a lot of Renesas Electronics America
NP100P06PLG-E1-AY applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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