
ONSEMI NLAST44599DTR2G
Manufacturer No:
NLAST44599DTR2G
Manufacturer:
ONSEMI
Package:
16-TSSOP (0.173, 4.40mm Width)
Description:
Dual DPDT Analog Switch, TTL Level
Quantity:


In Stock :3988
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Step1:Prepare product

Step2:Desiccant Protection

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Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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NLAST44599DTR2G Information
ONSEMI NLAST44599DTR2G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NLAST44599DTR2G.
- Type
- Parameter
- Case Outline
- 948F-01
- MSL Type
- 1
- MSL Temp (°C)
- 260
- Container Type
- REEL
- Number of Switches
- 8
- Configuration
- DPDT
- ron Max (Ω)
- 30
- Package Type
- TSSOP-16
- Container Qty.
- 2500
- Channels
- 4
- Type
- Parameter
- Icc Max (µA)
- 8
- VCC Min (V)
- 2
- VCC Max (V)
- 5.5
Download datasheets and manufacturer documentation for ONSEMI NLAST44599DTR2G.
Datasheet:
Package Drawing:
The NLAST44599 is an advanced CMOS dual-independent DPDT (double pole-double throw) analog switch, fabricated withsilicon gate CMOS technology. It achieves high-speed propagation delays and low ON resistances while maintaining CMOS low-power dissipation. This DPDT controls analog and digital voltages that may vary across the full power-supply range (from VCC to GND).The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches.The channel-select input structure provides protection whenvoltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage - input/output voltage mismatch, battery backup, hot insertion, etc.The NLAST44599 can also be used as a quad 2-to-1 multiplexer-demultiplexer analog switch with two Select pins that each controls two multiplexer-demultiplexers.
Feature
- Select Pins Compatible with TTL Levels
- Channel Select Input Over-Voltage Tolerant to 5.5 V
- Fast Switching and Propagation Speeds
- Break-Before-Make Circuitry
- Low Power Dissipation: ICC = 2 µA (Max) at TA = 25?C
- Diode Protection Provided on Channel Select Input
- Improved Linearity and Lower ON Resistance over Input Voltage
- Latchup Performance Exceeds 300 mA
- ESD Performance: HBM > 2000 V; MM > 100 V
- Chip Complexity: 158 FETs
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12.28 M
Listed Part Number3,000+
Leading Manufacturers4.9 M
In-stock SKU15,000+
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