ONSEMI NGTD13T65F2WP
Manufacturer No:
NGTD13T65F2WP
Manufacturer:
ONSEMI
Package:
Die
Description:
IGBT, 650V 30A FS2 bare die
Quantity:
In Stock :7302
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NGTD13T65F2WP Information
ONSEMI NGTD13T65F2WP technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NGTD13T65F2WP.
- Type
- Parameter
- IC Max (A)
- -
- VCE(sat) Typ (V)
- 1.6
- Irr Typ (A)
- -
- PD Max (W)
- -
- Case Outline
- -
- MSL Temp (°C)
- 0
- Container Qty.
- 1
- Co-Packaged Diode
- -
- MSL Type
- NA
- Container Type
- PLRNG
- Type
- Parameter
- Trr Typ (ns)
- -
- Gate Charge Typ (nC)
- -
- Package Type
- -
- V(BR)CES Typ (V)
- 650
- Eon Typ (mJ)
- -
- Short Circuit Withstand (µs)
- 5
- EAS Typ (mJ)
- -
- Family
- -
- VF Typ (V)
- -
- Eoff Typ (mJ)
- -
Download datasheets and manufacturer documentation for ONSEMI NGTD13T65F2WP.
Datasheet:
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.
Application
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
Feature
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Optimized for High Speed Switching
- 10 µs Short Circuit Capability
- These are Pb−Free Devices
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
