

ONSEMI NDT3055L
Manufacturer No:
NDT3055L
Manufacturer:
Package:
TO-261-4, TO-261AA
Description:
N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ
Quantity:


In Stock :8907
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Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NDT3055L Information
ONSEMI NDT3055L technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NDT3055L.
- Type
- Parameter
- Container Type
- REEL
- OPN in older Technology
- 0
- Package Type
- SOT-223-4 / TO-261-4
- MSL Temp (°C)
- 260
- Id Max (A)
- 4
- PD Max (W)
- 3
- Configuration
- NA
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Ciss Typ (pF)
- 345
- Crss Typ (pF)
- 30
- Type
- Parameter
- Qgd Typ @ VGS = 4.5 V (nC)
- 3.2
- MSL Type
- 1
- Silicon Family
- PowerTrench® T1
- Package Name
- SC-4
- Qg Typ @ VGS = 10 V (nC)
- 13
- Container Qty.
- 4000
- Channel Polarity
- N-Channel
- Vgs(th) Max (V)
- 2
- Qrr Typ (nC)
- -
- Coss Typ (pF)
- 110
Download datasheets and manufacturer documentation for ONSEMI NDT3055L.
Datasheet:
Package Drawing:
These logic level N-Channel enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Application
- This product is general usage and suitable for many different applications.
Feature
- 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V.
- Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability in a widely used surface mount package.
NDT3055L Relevant information
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