ONSEMI NDS0605

ONSEMI NDS0605

Manufacturer No:

NDS0605

Manufacturer:

ONSEMI

Package:

TO-236-3, SC-59, SOT-23-3

Description:

P-Channel Enhancement Mode Field Effect Transistor -60V, -0.18A, 5Ω

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DHL

In Stock :7183

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Shipped from:HK Warehouse
Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

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IMPORTANT NOTICE

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Step1:Prepare product

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Step2:Desiccant Protection

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Step4:Individual Package

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SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

NDS0605 Information

ONSEMI NDS0605 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NDS0605.

  • Type
  • Parameter
  • Package Name
  • SOT-23
  • Type
  • Small Signal
  • RDS(on) Max @ VGS = 10 V (mΩ)
  • 5000
  • Vgs(th) Max (V)
  • -3
  • RDS(on) Max @ VGS = 2.5 V (mΩ)
  • -
  • V(BR)DSS Min (V)
  • -60
  • Crss Typ (pF)
  • 380
  • Gate Level
  • Logic
  • Configuration
  • NA
  • OPN in older Technology
  • 0
  • Type
  • Parameter
  • VGS Max (V)
  • ±20
  • PD Max (W)
  • 0.36
  • Coss Typ (pF)
  • 1130
  • Container Type
  • REEL
  • Qgd Typ @ VGS = 4.5 V (nC)
  • 51
  • Container Qty.
  • 3000
  • Qg Typ @ VGS = 4.5 V (nC)
  • -
  • MSL Type
  • 1
  • Channel Polarity
  • P-Channel
  • Wide SOA Mosfets
  • 0

Download datasheets and manufacturer documentation for ONSEMI NDS0605.

This P-Channel enhancement mode power field effect transistor is produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Application

  • This product is general usage and suitable for many different applications.

Feature

  • -0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
  • Voltage controlled p-channel small signal switch.
  • High density cell design for extremely low RDS(ON).
  • High saturation current.