Rochester NDP603AL
Manufacturer No:
NDP603AL
Manufacturer:
Rochester
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 22m ? @ 25A, 10V ±20V 1.1pF @ 15V 40nC @ 10V 30V TO-220-3
Quantity:
In Stock :5156
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NDP603AL Information
Rochester NDP603AL technical specifications, attributes, parameters and parts with similar specifications to Rochester NDP603AL.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -65°C~175°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- NOT SPECIFIED
- Type
- Parameter
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Reach Compliance Code
- unknown
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- COMMERCIAL
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 50W Tc
Download datasheets and manufacturer documentation for Rochester NDP603AL.
NDP603AL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.1pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 25A.Peak drain current is 100A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NDP603AL Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
NDP603AL Applications
There are a lot of Rochester Electronics, LLC
NDP603AL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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