ONSEMI NDC652P
Manufacturer No:
NDC652P
Manufacturer:
ONSEMI
Package:
SOT-23-6 Thin, TSOT-23-6
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 110mOhm @ 3.1A, 10V -20V 290pF @ 15V 20nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
Quantity:
In Stock :9755
Looking for price or availability? Send us an RFQ and our sales team will respond quickly.
Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
NDC652P Information
ONSEMI NDC652P technical specifications, attributes, parameters and parts with similar specifications to ONSEMI NDC652P.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package
- SuperSOT?-6
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 1.6W Ta
- FET Type
- P-Channel
- Type
- Parameter
- Rds On (Max) @ Id, Vgs
- 110mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 290pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 2.4A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Drain to Source Voltage (Vdss)
- 30V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- -20V
Download datasheets and manufacturer documentation for ONSEMI NDC652P.
Datasheets:
PCN Design/Specification:
NDC652P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
NDC652P Features
2.4A, -30V. RDS(ON) = 0.18W @ VGS = -4.5V
RDS(ON) = 0.11W @ VGS = -10V.
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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