ONSEMI MVB50P03HDLT4G
Manufacturer No:
MVB50P03HDLT4G
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
Single P-Channel Logic Level Power MOSFET -30V, -50A, 25mΩ
Quantity:
In Stock :9689
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MVB50P03HDLT4G Information
ONSEMI MVB50P03HDLT4G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MVB50P03HDLT4G.
- Type
- Parameter
- Wide SOA Mosfets
- 0
- OPN in older Technology
- 0
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- 25
- Qg Typ @ VGS = 10 V (nC)
- 74
- Ciss Typ (pF)
- 3500
- Crss Typ (pF)
- 550
- MSL Type
- 1
- Silicon Family
- PowerTrench® T1
- Gate Level
- Logic
- V(BR)DSS Min (V)
- -30
- Type
- Parameter
- Vgs(th) Max (V)
- 2
- Container Type
- REEL
- RDS(on) Max @ VGS = 10 V (mΩ)
- -
- Vgs (V)
- 15
- PD Max (W)
- 125
- Qrr Typ (nC)
- 246
- Package Type
- D2PAK-3 / TO-263-2
- Container Qty.
- 800
- Channel Polarity
- P-Channel
- Qgd Typ @ VGS = 4.5 V (nC)
- -
Download datasheets and manufacturer documentation for ONSEMI MVB50P03HDLT4G.
Datasheet:
Package Drawing:
Automotive Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Application
- Power Supplies
- Motor Control
- Bridge Circuits
Feature
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Short Heatsink Tab Manufactured Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation
- These Devices are Pb−Free and are RoHS Compliant
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Listed Part Number
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In-stock SKU
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