ONSEMI MUN5211DW1T1G
Manufacturer No:
MUN5211DW1T1G
Manufacturer:
Package:
6-TSSOP, SC-88, SOT-363
Description:
Dual NPN Bipolar Digital Transistor (BRT)
Quantity:
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MUN5211DW1T1G Information
ONSEMI MUN5211DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MUN5211DW1T1G.
- Type
- Parameter
- Container Qty.
- 3000
- Polarity
- Dual NPN
- V(BR)CEO Min (V)
- 50
- Vi(off) Max (V)
- 0.8
- Package Type
- SC-88-6 / SC-70-6 / SOT-363-6
- Case Outline
- 419B-02
- R1/R2 Typ
- 1
- MSL Temp (°C)
- 260
- IC Continuous (A)
- 0.1
- hFE Min
- 35
- Type
- Parameter
- R2 (kΩ)
- 10
- MSL Type
- 1
- Container Type
- REEL
- R1 (kΩ)
- 10
- Vi(on) Min (V)
- 2.5
Download datasheets and manufacturer documentation for ONSEMI MUN5211DW1T1G.
Datasheet:
Package Drawing:
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Feature
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
MUN5211DW1T1G Relevant information
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