ONSEMI MTY100N10E
Manufacturer No:
MTY100N10E
Manufacturer:
ONSEMI
Package:
TO-264-3, TO-264AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 11m ? @ 50A, 10V ±20V 10640pF @ 25V 378nC @ 10V TO-264-3, TO-264AA
Quantity:
In Stock :4242
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MTY100N10E Information
ONSEMI MTY100N10E technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MTY100N10E.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-264-3, TO-264AA
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2004
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Powers
- Voltage - Rated DC
- 100V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- 240
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI MTY100N10E.
Datasheets:
ReachStatement:
MTY100N10E Description
MTY100N10E is a 100v N?Channel Power MOSFET. The onsemi MTY100N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy-efficient design also offers a drain?to?source diode with a fast recovery time. MTY100N10E is designed for high voltage, high-speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer an additional safety margin against unexpected voltage transients.
MTY100N10E Features
Avalanche Energy Specified
A diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Drain?Source Voltage:100v
Drain Current ? Continuous @ TC = 25°C: 100A
MTY100N10E Applications
Power supplies
Converters
PWM motor controls
Inductive loads
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)